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SiC Crystal Growth Equipment

Product overview

ZORRUN SEMICONDUCTOR's Physical Vapor Transport (PVT) system is specifically designed for SiC crystal growth. The basic system design is based on the concept of coil induction heating and is capable of growing crystal ingots up to 6/8 inches in diameter.
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SiC Crystal Growth Equipment


The Intelligent PVT SiC System (IPS) series are professional equipment for high-quality SiC crystal growth, high-purity raw material synthesis and high-temperature crystal heat treatment. They are widely applied in the fields of SiC crystal growth, raw material synthesis, and crystal heat treatment.

 

Product advantages

 

 

Designed for power electronics applications

-Applicable for power electronics applications, highly automated, and suitable for mass production.

-Small footprint and compact in size

-Fab management software solutions


Low-consumption coil design

-Low power consumption (stably controlled at approx. 2,200°C 10KW)

 

Excellent Security Concept

-CE Compliance

-System safety components at different levels for safe operation

-Documentation for quality measurements and extension


Intelligent Control System

- iGOS Fully Automated Crystal Growth Program: Integrates graphical programmable software and C+ vision software to achieve precise customization of multiple processes, which is capable of optimizing and compressing certain processes to improve efficiency.


Intelligent Self-Check System

- The industry - first PIM (Pre-inspection Model) self-check system: This is a system check prior to the production process for the purpose of averting delaying the crystal growth cycle due to failures of lines or related devices during the production process, thus effectively avoiding the unnecessary waste of processing time.


High quality of finished products

The rate of yield is in the leading position in China and the first-class level in the world.

-Microtubule defect density <5/cm2 ( <10/cm2 in the world)

-Resistivity of single crystal wafer reaches 0.015-0.028Ωcm (in line with international standards).


 

Technical parameters

serial number

project

content

Specifications/parameters

01

Cavity

Work pressure

≈1-900mbar

02

Cavity

Operating temperature

Up to 2600°C

03

Power consumption

power

Maximum 60KW

04

Power consumption

frequency

6-12 kHz

05

 

size

2000(W)*1200(D)*2,800(H)mm

06

 

weight

1,300kg (2000kg with control cabinet)

Keywords:

PVT

Physical Vapor Transport Method

Service Hotline

86-513-87276777

ZORRUN SEMICONDUCTOR CO., LTD
Address: No. 6, Telecom East 1st Road, Rugao City, Jiangsu Province
Contact: Ms. Xi (Human Resources Department)
Tel: 86-18112296722
Contact: Du Manager (Marketing Center)
Tel: 86-18112296790

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Service Hotline

86-513-87276777

ZORRUN SEMICONDUCTOR CO., LTD
Address: No. 6, Telecom East 1st Road, Rugao City, Jiangsu Province
Contact: Ms. Xi (Human Resources Department)
Tel: 86-18112296722
Contact: Du Manager (Marketing Center)
Tel: 86-18112296790

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Copyright©2023 ZORRUN SEMICONDUCTOR CO., LTD. All Rights Reserved.

Service Hotline: 86-513-87276777

Address: No. 6, Telecom East 1st Road, Rugao City, Jiangsu Province

E-mail: service@zorrun.com

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