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SiC Substrate Slice

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Silicon Carbide (SiC) Series

Product overview

With the world's first iGOWER vision intelligent crystal growing robot device, ZORRUN SEMICONDUCTOR adopts the PVT method to grow SiC substrate crystal wafers, into which the pre-treatment process technology for raw materials is added. It increases the purity and density of raw materials and reduces the possible defects in crystals. The process level is at the forefront of China.

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SiC Substrate Slice

SiC substrate slice is an indispensable and important material to support the electronic and electric power industry, with excellent characteristics of band gap, drift speed, breakdown voltage, thermal conductivity, high temperature resistance and so on, which is several times higher than the traditional silicon. It has irreplaceable advantages in high temperature, high voltage, high frequency, high power, photoelectricity, anti-radiation, microwavability and other electronic applications and extreme environment applications such as aerospace, military, nuclear energy and so on.

Technical parameters

*N-Type & High purity SiC Wafer

serial number	quality	4H silicon carbide substrate	6H silicon carbide substrate
01	diameter	100+0/-0.5mm	150±0.2mm
02	thickness	350±25um	350±25um
03	Resistivity	0.015~0.025Ω.cm	0.015~0.025Ω.cm
04	Primary positioning edge direction	{10-10}±5°	{10-10}±5°
05	Primary positioned edge length	32.5±2.0mm	47.5±2.0mm
06	Local thickness changes	≤4um	≤5um
07	Total thickness change	≤10um	≤15um
08	Curvature	≤25um	≤40um
09	Warpage	≤35um	≤60um
10	Surface roughness	Ra<0.5nm	Ra<0.5nm
11	Scratches	None	None
12	Chipping	None	None
13	Polycrystalline	None	None
14	Six-square hollow	Cumulative area≤0.05%	Cumulative area≤0.05%
15	Surface contaminants	None	None

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SiC Substrate Slice

Service Hotline: 86-513-87276777

Address: No. 6, Telecom East 1st Road, Rugao City, Jiangsu Province

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E-mail: service@zorrun.com

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