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SiC Epitaxial Wafers
Product overview
SiC Epitaxial Wafers
SiC epitaxial process is a key technology in the semiconductor industry. Epitaxial wafers grown with silicon carbide crystals as substrates are mainly used in the fabrication of a variety of discrete devices, such as Schottky diodes, MOSFETs, JEETs, BJTs, IGBTs, thyristors, etc. These devices are widely used in the fields of photovoltaic inverters, hybrid electric vehicles, solar and wind power generation, UPS, motor control, railway locomotives, ships and smart grids, and so on.
Technical parameters
*100mm/150mm SiC Epi Wafer
|
serial number |
Specifications/parameters |
4H epitaxy |
6H epitaxy |
|
01 |
Thickness(um) |
11 |
～11 |
|
02 |
Thickness range |
≤7% |
≤8% |
|
03 |
Doping type |
N-type or semi-insulated |
N-type or semi-insulated |
|
04 |
Doping level (/cm3) |
6E15～8E15 |
6E15～8E15 |
|
05 |
Doping range |
≤13% |
≤13% |
|
06 |
Defect density (/cm3) |
≤1.3 |
≤1.3 |
|
07 |
BPD density (/cm2) |
≤0.1 |
≤0.1 |
|
08 |
Surface roughness (nm) |
Ra≤0.3 |
Ra≤0.3 |
* Other optional sizes include 76.2mm and 125mm in diameter, and can also be customized as required by customers.
SiC Epitaxial Wafers
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